http://www.luguang.cn email:lge@luguang.cn to-92 1. emitter 2. base 3. collector pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage : bc556 : bc557/560 : bc558/559 -80 -50 -30 v v v v ceo collector-emitter voltage : bc556 : bc557/560 : bc558/559 -65 -45 -30 v v v v ebo emitter-base voltage -5 v i c collector current (dc) -100 ma p c collector power dissipation 500 mw t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb = -30v, i e =0 -15 na h fe dc current gain v ce = -5v, i c =2ma 110 800 v ce (sat) collector-emitter saturation voltage i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma -90 -250 -300 -650 mv mv v be (sat) collector-base saturation voltage i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma -700 -900 mv mv v be (on) base-emitter on voltage v ce = -5v, i c = -2ma v ce = -5v, i c = -10ma -600 -660 -750 -800 mv mv f t current gain bandwidth product v ce = -5v, i c = -10ma, f=10mhz 150 mhz c ob output capacitance v cb = -10v, i e =0, f=1mhz 6 pf nf noise figure : bc556/557/558 : bc559/560 : bc559 : BC560 v ce = -5v, i c = -200 a f=1khz, r g =2k ? v ce = -5v, i c = -200 a r g =2k ?, f=30~15000mhz 2 1 1.2 1.2 10 4 4 2 db db db db classification a b c h fe 110 ~ 220 200 ~ 450 420 ~ 800 bc556/557/558/559/560 switching and amplifier ? high voltage: bc556, v ceo = -65v ? low noise: bc559, BC560 ? complement to bc546 ... bc 550
http://www.luguang.cn email:lge@luguang.cn bc556/557/558/559/560 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = -50 a i b = -100 a i b = -150 a i b = -200 a i b = -250 a i b = -300 a i b = -350 a i b = -400 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 1 10 100 1000 v ce = -5v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 i c = -10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 f=1mhz i e = 0 c ob (pf), capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 v ce = -5v f t [mhz], current gain-bandwidth product i c [ma], collector current
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